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| NGD18N40CLB Ignition IGBT 18 Amps, 400 Volts N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features http://onsemi.com * * * * * * * * * * * * Ideal for Coil-on-Plug Applications DPAK Package Offers Smaller Footprint for Increased Board Space Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) Emitter Ballasting for Short-Circuit Capability Pb-Free Package is Available* 18 AMPS 400 VOLTS VCE(on) 3 2.0 V @ IC = 10 A, VGE . 4.5 V C G RG RGE E 4 12 3 DPAK CASE 369C STYLE 7 MARKING DIAGRAM 1 Gate MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current-Continuous @ TC = 25C - Pulsed ESD (Human Body Model) R = 1500 , C = 100 pF ESD (Machine Model) R = 0 , C = 200 pF Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD 8.0 ESD PD TJ, Tstg 800 115 0.77 -55 to +175 V Watts W/C C Value 430 430 18 15 50 Unit VDC VDC VDC ADC AAC kV 2 Collector 3 Emitter G18N40B Y WW G YWW G18 N40BG 4 Collector = Device Code = Year = Work Week = Pb-Free Device ORDERING INFORMATION Device NGD18N40CLBT4 NGD18N40CLBT4G Package DPAK Shipping 2500/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DPAK 2500/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 May, 2006 - Rev. 7 1 Publication Order Number: NGD18N40CLB/D NGD18N40CLB UNCLAMPED COLLECTOR-TO-EMITTER AVALANCHE CHARACTERISTICS (-55 TJ 175C) Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25C VCC = 50 V, VGE = 5.0 V, Pk IL = 16.2 A, L = 3.0 mH, Starting TJ = 25C VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25C Symbol EAS Value 400 400 300 mJ 2000 Unit mJ EAS(R) MAXIMUM SHORT-CIRCUIT TIMES (-55C TJ 150C) Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period) Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period) tsc1 tsc2 RJC DPAK (Note 1) RJA TL 750 5.0 ms ms THERMAL CHARACTERISTICS Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1.3 95 275 C/W C/W C Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Clamp Voltage BVCES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current ICES TJ = -40C to 150C TJ = -40C to 150C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 25C VCE = -24 V Reverse Collector-Emitter Clamp Voltage BVCES(R) IC = -75 mA Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Resistor Gate Emitter Resistor BVGES IGES RG RGE TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C IG = 5.0 mA VGE = 10 V - - TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C TJ = -40C to 150C 380 390 - - - - - - - 27 30 25 11 384 - 10 395 405 2.0 10 1.0 - 0.7 12 0.1 33 36 32 13 640 70 16 420 430 20 40* 10 2.0 1.0 25* 1.0 37 40 35 15 700 - 26 VDC ADC VDC VCE = 350 V, VGE = 0 V VCE = 15 V, VGE = 0 V ADC Reverse Collector-Emitter Leakage Current IECS mA VDC k 1. When surface mounted to an FR4 board using the minimum recommended pad size. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 2 NGD18N40CLB ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE - TJ = 25C TJ = 150C TJ = -40C - TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = 150C TJ = -40C TJ = 25C TJ = -40C to 150C 1.1 0.75 1.2 - 1.0 0.9 1.1 1.3 1.2 1.4 1.4 1.4 1.4 1.8 2.0 1.7 1.3 1.3 1.4 - 8.0 1.4 1.0 1.6 3.4 1.4 1.3 1.45 1.6 1.55 1.6 1.8 1.8 1.8 2.2 2.4 2.1 1.8 1.75 1.8 - 14 1.9 1.4 2.1* - 1.6 1.6 1.7* 1.9* 1.8 1.9* 2.05 2.0 2.1* 2.5 2.6* 2.5 2.0* 2.0* 2.0* 1.65 25 Mhos mV/C VDC VDC Threshold Temperature Coefficient (Negative) Collector-to-Emitter On-Voltage - VCE(on) IC = 6.0 A, VGE = 4.0 V IC = 8.0 A, VGE = 4.0 V IC = 10 A, VGE = 4.0 V IC = 15 A, VGE = 4.0 V IC = 10 A, VGE = 4.5 V IC = 6.5 A, VGE = 3.7 V Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance CISS COSS CRSS 400 VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = -40C to 150C 50 4.0 800 75 7.0 1000 100 10 pF SWITCHING CHARACTERISTICS Turn-Off Delay Time (Resistive) Fall Time (Resistive) Turn-On Delay Time Rise Time td(off) tf td(on) tr VCC = 300 V, IC = 6.5 A RG = 1.0 k, RL = 46 , VCC = 300 V, IC = 6.5 A RG = 1.0 k, RL = 46 , VCC = 10 V, IC = 6.5 A RG = 1.0 k, RL = 1.5 VCC = 10 V, IC = 6.5 A RG = 1.0 k, RL = 1.5 TJ = 25C TJ = 25C TJ = 25C TJ = 25C - - - - 4.0 9.0 0.7 4.5 10 15 4.0 7.0 Sec Sec 2. Pulse Test: Pulse Width v 300 S, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 3 NGD18N40CLB TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) VGE = 10 V 50 40 30 20 3V 10 0 2.5 V 0 1 2 3 4 5 6 7 8 TJ = 25C 5V 4.5 V 4V 3.5 V 60 50 4.5 V 40 TJ = -40C 30 20 3V 10 0 2.5 V 0 1 2 3 4 5 6 7 8 4V 3.5 V VGE = 10 V 5V VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics 60 IC, COLLECTOR CURRENT (AMPS) 50 5V 40 TJ = 150C 30 20 10 0 4.5 V 4V 3.5 V 3V 2.5 V 0 1 2 3 4 5 6 7 8 60 IC, COLLECTOR CURRENT (AMPS) VGE = 10 V 55 50 45 40 35 30 25 20 15 10 5 0 Figure 2. Output Characteristics VCE = 10 V TJ = -40C TJ = 150C TJ = 25C 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) VGE, GATE TO EMITTER VOLTAGE (VOLTS) Figure 3. Output Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 4. Transfer Characteristics 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 VGE = 5 V IC = 25 A IC = 20 A IC = 15 A IC = 10 A IC = 5 A 3 2.5 IC = 15 A 2 1.5 1 0.5 0 IC = 10 A IC = 5 A TJ = 25C 3 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE (C) GATE-TO-EMITTER VOLTAGE (VOLTS) Figure 5. Collector-to-Emitter Saturation Voltage versus Junction Temperature Figure 6. Collector-to-Emitter Voltage versus Gate-to-Emitter Voltage http://onsemi.com 4 NGD18N40CLB COLLECTOR TO EMITTER VOLTAGE (VOLTS) 3 2.5 2 1.5 1 0.5 0 IC = 15 A IC = 10 A IC = 5 A TJ = 150C 10000 1000 100 10 1 0 3 4 5 6 7 8 9 10 GATE TO EMITTER VOLTAGE (VOLTS) Ciss C, CAPACITANCE (pF) Coss Crss 0 20 40 60 80 100 120 140 160 180 200 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector-to-Emitter Voltage versus Gate-to-Emitter Voltage 2 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -30 -10 10 30 50 70 90 110 130 150 VTH IL, LATCH CURRENT (AMPS) 1.8 VTH + 4 VTH - 4 30 25 20 15 10 5 0 -50 -25 Figure 8. Capacitance Variation GATE THRESHOLD VOLTAGE (VOLTS) VCC = 50 V VGE = 5.0 V RG = 1000 L = 1.8 mH L = 3 mH L = 6 mH 0 25 50 75 100 125 150 175 TEMPERATURE (C) TEMPERATURE (C) Figure 9. Gate Threshold Voltage versus Temperature 30 IL, LATCH CURRENT (AMPS) 25 L = 1.8 mH 20 15 10 5 0 -50 -25 L = 3 mH L = 6 mH VCC = 50 V VGE = 5.0 V RG = 1000 12 10 SWITCHING TIME (s) 8 6 Figure 10. Minimum Open Secondary Latch Current versus Temperature VCC = 300 V VGE = 5.0 V RG = 1000 IC = 10 A L = 300 H tf td(off) 4 2 0 -50 -30 -10 0 25 50 75 100 125 150 175 10 30 50 70 90 110 130 150 TEMPERATURE (C) TEMPERATURE (C) Figure 11. Typical Open Secondary Latch Current versus Temperature Figure 12. Inductive Switching Fall Time versus Temperature http://onsemi.com 5 NGD18N40CLB 100 COLLECTOR CURRENT (AMPS) DC 10 100 s 1 1 ms 10 ms 0.1 100 ms COLLECTOR CURRENT (AMPS) 100 10 DC 1 100 s 1 ms 10 ms 0.1 100 ms 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C) Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C) 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) t1 = 1 ms, D = 0.05 10 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 100 t1 = 1 ms, D = 0.05 10 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 1 1 0.1 0.1 0.01 1 10 100 1000 0.01 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE (VOLTS) COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 16. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) VBATT = 16 V VBATT = 16 V RL = 0.1 W RL = 0.1 W L = 10 mH L = 10 mH 5.0 V 5.0 V VIN RG = 1 kW RS = 55 mW VIN RG = 1 kW Figure 17. Circuit Configuration for Short Circuit Test #1 http://onsemi.com 6 Figure 18. Circuit Configuration for Short Circuit Test #2 NGD18N40CLB 100 Duty Cycle = 0.5 R(t), TRANSIENT THERMAL RESISTANCE (C/Watt) 0.2 10 0.1 0.05 0.02 1 0.01 0.1 0.01 P(pk) Single Pulse t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJA(t) RqJC X R(t) for t 0.2 s 0.001 0.0001 0.00001 0.0001 0.001 t,TIME (S) 0.01 0.1 1 Figure 19. Transient Thermal Resistance (Non-normalized Junction-to-Ambient mounted on minimum pad area) http://onsemi.com 7 NGD18N40CLB PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- GATE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E S A 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M DIM A B C D E F G H J K L R S U V Z T STYLE 7: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 NGD18N40CLB/D |
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